A method for reducing series resistance for transistors includes forming a conductive gate over and insulated from a semiconductor substrate, forming source and/or drain extension regions within the substrate and adjacent to respective source and/or drain regions, and forming source and/or drain regions within the substrate. The source and/or drain extension regions are formed from a material alloyed with a first dopant and a second dopant, the first dopant configured to increase a lattice structure of the material forming the source and/or drain extension regions.