Invention Grant
- Patent Title: Overlap capacitance nanowire
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Application No.: US14667349Application Date: 2015-03-24
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Publication No.: US10319860B2Publication Date: 2019-06-11
- Inventor: Effendi Leobandung
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/775 ; H01L29/06 ; B82Y10/00 ; B82Y40/00 ; H01L29/10
Abstract:
A device and method for fabricating a nanowire include patterning a first set of structures on a substrate. A dummy structure is formed over portions of the substrate and the first set of structures. Exposed portions of the substrate are etched to provide an unetched raised portion. First spacers are formed about a periphery of the dummy structure and the unetched raised portion. The substrate is etched to form controlled undercut etched portions around a portion of the substrate below the dummy structure. Second spacers are formed in the controlled undercut etched portions. Source/drain regions are formed with interlayer dielectric regions formed thereon. The dummy structure is removed. The substrate is etched to release the first set of structures. Gate structures are formed including a top gate formed above the first set of structures and a bottom gate formed below the first set of structures to provide a nanowire.
Public/Granted literature
- US20150214371A1 OVERLAP CAPACITANCE NANOWIRE Public/Granted day:2015-07-30
Information query
IPC分类:
