Invention Grant
- Patent Title: Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
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Application No.: US15373065Application Date: 2016-12-08
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Publication No.: US10319863B2Publication Date: 2019-06-11
- Inventor: Seung Hun Lee , Dong Woo Kim , Dong Chan Suh , Sun Jung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0066521 20160530
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L21/02 ; H01L29/786 ; H01L27/092 ; H01L29/423 ; H01L21/8238 ; H01L29/775 ; B82Y10/00 ; H01L29/08
Abstract:
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Public/Granted literature
- US20170345945A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-11-30
Information query
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