Invention Grant
- Patent Title: Schottky enhanced bias circuit
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Application No.: US15896617Application Date: 2018-02-14
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Publication No.: US10320334B2Publication Date: 2019-06-11
- Inventor: David Steven Ripley
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02 ; H03F3/19 ; H03F3/24 ; H03F1/30

Abstract:
Embodiments disclosed herein relate to a bias circuit that uses Schottky diodes. Typically, a bias circuit will include a number of transistors used to generate a bias voltage or a bias current for a power amplifier. Many wireless devices include power amplifiers to facilitate processing signals for transmission and/or received signals. By substituting the bias circuit design with a design that utilizes Schottky diodes, the required battery voltage of the bias circuit may be reduced enabling the use of lower voltage power supplies.
Public/Granted literature
- US20180269838A1 SCHOTTKY ENHANCED BIAS CIRCUIT Public/Granted day:2018-09-20
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