Invention Grant
- Patent Title: Hardmask composition and method of forming pattern using the hardmask composition
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Application No.: US14791912Application Date: 2015-07-06
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Publication No.: US10331033B2Publication Date: 2019-06-25
- Inventor: Hyeonjin Shin , Sangwon Kim , Seongjun Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0083905 20140704
- Main IPC: G03F7/11
- IPC: G03F7/11 ; C08G83/00 ; C08K3/30 ; C08K3/38 ; G03F7/40 ; H01L21/47 ; H01L21/4757 ; G03F7/09

Abstract:
A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.
Public/Granted literature
- US09989853B2 Hardmask composition and method of forming pattern using the hardmask composition Public/Granted day:2018-06-05
Information query
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