Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US14057100Application Date: 2013-10-18
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Publication No.: US10332728B2Publication Date: 2019-06-25
- Inventor: Naohiko Okunishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2012-231551 20121019; JP2013-107194 20130521
- Main IPC: H05H1/46
- IPC: H05H1/46 ; H01J37/32 ; H01L21/67 ; H01L21/683

Abstract:
In a plasma processing apparatus, a heating element 50 provided in a susceptor 12 is electrically connected to a heater power supply 58 disposed at an outside of a chamber 10 via an internal conductor 51 provided through the susceptor 12, a power feed conductor 52 provided across a space SP, a filter unit 54 and an electric cable 56. A casing 110 of the filter unit 54 is vertically fastened, from a bottom of the chamber 10, to an opening 114 formed in a bottom wall (base) 10a of the chamber 10 to be adjacent to a cylindrical conductive cover 42 that surrounds a power feed rod 40. The casing 110 is physically or electrically coupled to the bottom wall 10a of the chamber 10.
Public/Granted literature
- US20140110061A1 PLASMA PROCESSING APPARATUS Public/Granted day:2014-04-24
Information query
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