Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes performing an etch process to remove a portion of the conformal film. The method includes repeating the first deposition process and the etch process to fill the feature with the conformal film. The method includes exposing the conformal film to ultraviolet light.