Invention Grant
- Patent Title: Selective titanium nitride deposition using oxides of lanthanum masks
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Application No.: US15878519Application Date: 2018-01-24
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Publication No.: US10332747B1Publication Date: 2019-06-25
- Inventor: Koji Watanabe , Meng Zhu , Brian A. Cohen , Matthew T. Whitman , Balaji Kannan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent Francois Pagette
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/285 ; H01L29/49 ; H01L29/51 ; C23C16/34 ; C23C16/455 ; C23C16/04 ; H01L21/28
Abstract:
In an exemplary method, a dielectric layer is deposited on a substrate. A masking layer is formed over a first region and a second region of the dielectric layer. The masking layer is made of an oxide of lanthanum. The masking layer is removed from the second region of the dielectric layer. A work function layer is formed directly on only the second region of the dielectric layer. The work function layer is made of titanium nitride that is formed by using a combination of titanium tetrachloride and ammonia (TiCl4/NH3).
Information query
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