Invention Grant
- Patent Title: Substrate, semiconductor device, and manufacturing method of substrate
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Application No.: US15815080Application Date: 2017-11-16
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Publication No.: US10332752B2Publication Date: 2019-06-25
- Inventor: Yoshiaki Takemoto
- Applicant: OLYMPUS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: OLYMPUS CORPORATION
- Current Assignee: OLYMPUS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/3205 ; H01L23/522 ; H01L21/768 ; H01L23/31
Abstract:
A substrate includes a support layer, a column-shaped first bump, and a second bump. The support layer has a main surface. The first bump is filled with a first conductive metal and also has a first upper surface and a side surface. The second bump includes a plurality of fine particles formed of a second conductive metal and also has a third portion configured to cover the first upper surface and a fourth portion configured to cover a part of the side surface. The first bump is disposed on the main surface, or the first bump is connected to an electrode disposed on the main surface. The second bump has a convex second upper surface. A height of the fourth portion in a direction perpendicular to the first upper surface is smaller than that of the first bump.
Public/Granted literature
- US20180076050A1 SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SUBSTRATE Public/Granted day:2018-03-15
Information query
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