Invention Grant
- Patent Title: Selectively removing titanium nitride hard mask and etch residue removal
-
Application No.: US15077374Application Date: 2016-03-22
-
Publication No.: US10332784B2Publication Date: 2019-06-25
- Inventor: William Jack Casteel, Jr. , Seiji Inaoka , Wen Dar Liu , Tianniu Chen
- Applicant: Air Products and Chemicals, Inc.
- Applicant Address: US AZ Tempe
- Assignee: VERSUM MATERIALS US, LLC
- Current Assignee: VERSUM MATERIALS US, LLC
- Current Assignee Address: US AZ Tempe
- Agent Lina Yang
- Main IPC: C09K13/00
- IPC: C09K13/00 ; H01L21/768 ; C09K13/04 ; C23F1/14 ; C09K13/08 ; C09K13/06 ; C23F1/38 ; H01L21/3213 ; H01L21/311
Abstract:
Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH
Public/Granted literature
- US20160293479A1 Selectively Removing Titanium Nitride Hard Mask and Etch Residue Removal Public/Granted day:2016-10-06
Information query
