- Patent Title: Methods of fabricating conductive traces and resulting structures
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Application No.: US15841660Application Date: 2017-12-14
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Publication No.: US10332792B1Publication Date: 2019-06-25
- Inventor: Christopher J. Gambee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/532 ; H01L23/00

Abstract:
A method of forming conductive traces comprises forming a seed material over a surface of a substrate, forming a patterned mask material over the seed material to define trenches leaving portions of the seed material within the trenches exposed, and depositing a conductive material over the exposed seed material in the trenches to form conductive traces. At least a portion of the patterned mask material is removed, a barrier formed over side surfaces and upper surfaces of the conductive traces, and exposed portions of the seed material are removed. Conductive traces and structures incorporating conductive traces are also disclosed.
Public/Granted literature
- US20190189507A1 METHODS OF FABRICATING CONDUCTIVE TRACES AND RESULTING STRUCTURES Public/Granted day:2019-06-20
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