Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
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Application No.: US15951194Application Date: 2018-04-12
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Publication No.: US10332889B2Publication Date: 2019-06-25
- Inventor: Ger-Pin Lin , Tien-Chen Chan , Shu-Yen Chan , Chi-Mao Hsu , Shih-Fang Tzou , Ting-Pang Chung , Chia-Wei Wu
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710785056 20170904
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/108 ; H01L21/02 ; H01L21/324 ; H01L21/48 ; H01L21/762
Abstract:
A method of manufacturing a semiconductor device is provided, which includes the steps of providing a capacitor structure, forming a conductive layer on the capacitor structure, performing a hydrogen doping process to the conductive layer, forming a metal layer on the conductive layer after the hydrogen doping process, and patterning the metal layer and the conductive layer to forma top electrode plate.
Public/Granted literature
- US20190074280A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2019-03-07
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