Invention Grant
- Patent Title: Semiconductor device having a protruding interposer edge face
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Application No.: US15824858Application Date: 2017-11-28
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Publication No.: US10332937B2Publication Date: 2019-06-25
- Inventor: Akira Furuya , Koichi Koyama , Mitsuharu Hirano
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP.
- Priority: JP2016-244707 20161216
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L27/30 ; H01L21/48 ; H01L21/67 ; G02B6/30 ; H01L23/367 ; H01L23/48 ; H01L25/065 ; H01L25/00 ; H01L23/13 ; H01L23/538 ; H01L23/00 ; H01L23/498

Abstract:
A semiconductor device includes: a printed substrate having a through hole from an upper face to a lower face thereof; a first semiconductor element mounted on the printed substrate; an interposer mounted on the upper face of the printed substrate; a second semiconductor element adjacent to the interposer and arranged to overlap with the through hole; and a bonding wire coupling a first pad to a second pad, the first pad being on an upper face of the interposer and being positioned on the second semiconductor element side, the second pad being on an upper face of the second semiconductor element and being positioned on the interposer side, wherein the interposer has an edge face protruding with respect to a wall face of the through hole of the printed substrate toward the second semiconductor element, and the edge face faces with an edge face of the second semiconductor element.
Public/Granted literature
- US20180175113A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-06-21
Information query
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