A vertical, single column compound semiconductor bipolar junction transistor device includes an all-around extrinsic base. Homojunction and heterojunction devices are formed using III-V compound semiconductor materials with appropriate bandgaps. Fabrication of the transistor device includes epitaxially growing a III-V compound semiconductor base region on a heavily doped III-V compound semiconductor bottom layer. A polycrystalline emitter/collector layer and the all-around extrinsic base are grown on the base region.