Invention Grant
- Patent Title: Thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device
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Application No.: US15518973Application Date: 2015-12-29
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Publication No.: US10333002B2Publication Date: 2019-06-25
- Inventor: Seungjin Choi , Jaehong Kim
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201510516319 20150820
- International Application: PCT/CN2015/099336 WO 20151229
- International Announcement: WO2017/028455 WO 20170223
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/02 ; H01L29/06 ; H01L29/49 ; H01L29/66 ; H01L29/417 ; H01L29/786

Abstract:
Provided are a thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device. The thin film transistor comprises: an active layer, an etch stop layer disposed on the active layer, an overcoating layer disposed on the etch stop layer, and a source electrode and a drain electrode disposed on the overcoating layer, wherein the overcoating layer comprises at least one of a conductive material layer, a non-transparent insulation layer and a non-transparent semiconductor layer, and the source electrode and the drain electrode are electrically connected with the active layer.
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