Invention Grant
- Patent Title: Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells
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Application No.: US15127996Application Date: 2015-03-20
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Publication No.: US10333017B2Publication Date: 2019-06-25
- Inventor: Nanditha M. Dissanayake , Matthew Eisaman , Ahsan Ashraf , Nancy Goroff , Xiuzhu Ang
- Applicant: Brookhaven Science Associates, LLC , The Research Foundation for The State University of New York
- Applicant Address: US NY Upton US NY Stony Brook
- Assignee: Brookhaven Science Associates, LLC,The Research Foundation for the State University of New York
- Current Assignee: Brookhaven Science Associates, LLC,The Research Foundation for the State University of New York
- Current Assignee Address: US NY Upton US NY Stony Brook
- Agency: Fox Rothschild LLP
- International Application: PCT/US2015/021833 WO 20150320
- International Announcement: WO2015/143371 WO 20150924
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L51/00 ; H01L51/42 ; H01L31/028 ; H01L31/0216 ; H01L31/0224 ; H01L31/0392 ; H01L31/0749
Abstract:
Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
Public/Granted literature
- US20170110616A1 HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS Public/Granted day:2017-04-20
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