Group 4 transition metal-containing film forming compositions are disclosed comprising Group 4 transition metal precursors having the formula: wherein M is Ti, Zr, or Hf; each A is independently N, Si, B or P; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a H or a C1-C4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′2, OR′, Cp, amidinate, β-diketonate, or keto-iminate, wherein R′ is a H or a C1-C4 hydrocarbon group; and L′ is NR″ or O, wherein R″ is a H or a C1-C4 hydrocarbon group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.