Invention Grant
- Patent Title: TFT substrate and manufacturing method thereof
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Application No.: US15539698Application Date: 2017-05-18
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Publication No.: US10338440B2Publication Date: 2019-07-02
- Inventor: Mian Zeng , Xiaodi Liu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Leong C. Lei
- Priority: CN201710229766 20170410
- International Application: PCT/CN2017/084978 WO 20170518
- International Announcement: WO2018/188160 WO 20181018
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/04 ; H01L29/15 ; H01L31/036 ; G02F1/1343 ; G02F1/1368 ; G02F1/1362 ; G02F1/1337

Abstract:
The invention provides a TFT substrate and manufacturing method thereof. The TFT substrate comprises: base substrate, TFT layer, passivation layer and pixel electrode, stacked in above order; wherein the pixel electrode comprising: main electrode, and connection electrode connected to main electrode; the connection electrode connected to TFT layer through pixel electrode via; main electrode having a cross-like slit structure with branch electrode on four trunks of cross, and the connection electrode comprising a plurality of parallel stripe-shaped first branch electrodes, and a second branch electrode connected to the first branch electrodes; by disposing the first branch electrodes, the connection electrode having a shape similar to main electrode to make the main and connection electrodes having similar single slit diffraction when exposed to reduce or eliminate the photo-resist thickness difference in pixel electrode area in the 3M process to avoid display defect and improve yield rate.
Public/Granted literature
- US20180292717A1 TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-10-11
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