Invention Grant
- Patent Title: Lithography system, simulation apparatus, and pattern forming method
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Application No.: US15315073Application Date: 2015-06-01
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Publication No.: US10338480B2Publication Date: 2019-07-02
- Inventor: Tomoyuki Matsuyama , Shintaro Kudo , Hirotaka Kohno
- Applicant: NIKON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NIKON CORPORATION
- Current Assignee: NIKON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-112235 20140530
- International Application: PCT/JP2015/065828 WO 20150601
- International Announcement: WO2015/182788 WO 20151203
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/00 ; G03F7/00 ; G03F7/20 ; G03F1/36 ; G03F1/70 ; G03F1/82

Abstract:
A simulation apparatus has: a first processing part configured to obtain a value of a parameter in a first set relating to the forming of the pattern; a second processing part configured to obtain a value of a parameter in a second set that is at least partially same as the parameter in the first set and relating to the forming of the pattern; and an integration processing part configured to evaluate, based on the value of the parameter in the first set and the value of the parameter in the second set, a state of the pattern formed on the substrate and a forming condition when the pattern is formed, and to determine based on the result of the evaluation whether or not to make at least one of the first processing part and the second processing part recalculate the value of the parameter in the corresponding set.
Public/Granted literature
- US20170363962A1 LITHOGRAPHY SYSTEM, SIMULATION APPARATUS, AND PATTERN FORMING METHOD Public/Granted day:2017-12-21
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