Invention Grant
- Patent Title: Memory device
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Application No.: US15457518Application Date: 2017-03-13
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Publication No.: US10338835B2Publication Date: 2019-07-02
- Inventor: Yoshiaki Osada , Katsuhiko Hoya , Yorinobu Fujino , Kosuke Hatsuda
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: G06F11/08
- IPC: G06F11/08 ; G06F3/06 ; G06F11/10 ; G11C11/16 ; G11C29/52 ; G11C29/00

Abstract:
According to one embodiment, a memory device includes a memory cell; a first circuit that performs a first read on the memory cell, writes first data in the memory cell on which the first read has been performed, performs a second read on the memory cell in which the first data has been written, determines data from a result of the first read based on a result of the second read, and writes back the determined data into the memory cell; and an error correcting circuit that performs error correction on the determined data.
Public/Granted literature
- US20180074737A1 MEMORY DEVICE Public/Granted day:2018-03-15
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