Polymer, organic layer composition, and method of forming patterns

Invention Grant

US10340148B2 Polymer, organic layer composition, and method of forming patterns 有权

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Patent Title: Polymer, organic layer composition, and method of forming patterns
Application No.: US15264664

Application Date: 2016-09-14
Publication No.: US10340148B2

Publication Date: 2019-07-02
Inventor: Hyo Young Kwon , Ran Namgung , Dominea Rathwell , Hyeonil Jung
Applicant: SAMSUNG SDI CO., LTD.
Applicant Address: KR Yongin-si, Gyeonggi-do
Assignee: SAMSUNG SDI CO., LTD.
Current Assignee: SAMSUNG SDI CO., LTD.
Current Assignee Address: KR Yongin-si, Gyeonggi-do
Agency: Lee & Morse, P.C.
Priority: KR10-2015-0145367 20151019
Main IPC: H01L21/308
IPC: H01L21/308 ; C08G73/06 ; C08G73/22 ; C08G75/32 ; G03F7/039 ; G03F7/11 ; G03F7/16 ; G03F7/20 ; G03F7/30 ; H01L21/02 ; H01L21/027 ; H01L21/306 ; H01L21/324 ; C08G14/02 ; C08G14/04 ; C08G14/06 ; C09D161/34 ; C09D179/04 ; C08G73/18 ; H01L21/033 ; C08G65/00 ; C09D153/00 ; C09D165/00 ; G03F7/00

Polymer, organic layer composition, and method of forming patterns

Abstract:

A polymer, an organic layer composition, and a method of forming patterns, the polymer including a structural unit represented by Chemical Formula 1:

Public/Granted literature

US20170110328A1 POLYMER, ORGANIC LAYER COMPOSITION, AND METHOD OF FORMING PATTERNS Public/Granted day:2017-04-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/308	.......应用掩膜的（H01L21/3063，H01L21/3065优先）