Invention Grant
- Patent Title: Ni:NiGe:Ge selective etch formulations and method of using same
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Application No.: US15103593Application Date: 2014-12-16
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Publication No.: US10340150B2Publication Date: 2019-07-02
- Inventor: Steven Bilodeau , Jeffrey A. Barnes , Emanuel Cooper , Hsing-Chen Wu , Sheng-Hung Tu , Thomas Parson , Min-chieh Yang
- Applicant: Entegris, Inc. , ATMI TAIWAN CO., LTD.
- Applicant Address: US MA Billerica
- Assignee: Entegris, Inc.
- Current Assignee: Entegris, Inc.
- Current Assignee Address: US MA Billerica
- Agency: Entegris, Inc.
- International Application: PCT/US2014/070566 WO 20141216
- International Announcement: WO2015/095175 WO 20150625
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; C09K13/00 ; H01L21/3205 ; H01L29/16 ; H01L29/26 ; H01L29/45 ; C09G1/04 ; H01L21/24
Abstract:
Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
Public/Granted literature
- US20160314990A1 NI:NIGE:GE SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME Public/Granted day:2016-10-27
Information query
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