Invention Grant
- Patent Title: Semiconductor structure and method of forming
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Application No.: US15098843Application Date: 2016-04-14
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Publication No.: US10340155B2Publication Date: 2019-07-02
- Inventor: Wei-Yu Chen , Tien-Chung Yang , An-Jhih Su , Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/48 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L23/13 ; H01L23/538
Abstract:
A structure and method of forming are provided. The structure includes a dielectric layer disposed on a substrate. The structure includes a cavity in the dielectric layer, and a plurality of contacts positioned in the cavity and bonded to the substrate. A component is bonded to the plurality of contacts. Underfill is disposed in the cavity between the dielectric layer and the component. A plurality of connectors is on the dielectric layer, the connectors being connected through the dielectric layer to a conductor that is at a same level of metallization as the plurality of contacts.
Public/Granted literature
- US20170301562A1 Semiconductor Structure and Method of Forming Public/Granted day:2017-10-19
Information query
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