Invention Grant
- Patent Title: Fin field effect transistor and manufacturing method thereof
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Application No.: US15432626Application Date: 2017-02-14
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Publication No.: US10340193B2Publication Date: 2019-07-02
- Inventor: Ta-Hsun Yeh , Cheng-Wei Luo , Hsiao-Tsung Yen , Yuh-Sheng Jean
- Applicant: REALTEK SEMICONDUCTOR CORP.
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee: REALTEK SEMICONDUCTOR CORP.
- Current Assignee Address: TW Hsinchu
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: TW105110744A 20160406
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L21/3065 ; H01L21/308 ; H01L21/311 ; H01L21/762
Abstract:
A fin field-effect transistor is provided. The fin field-effect transistor includes a substrate, a fin structure, a gate-stacked structure, and an isolation structure. The fin structure is disposed on the substrate, and the gate-stacked structure covers the fin structure. The isolation structure disposed on the substrate to isolate the gate-stacked structure from the substrate has different thicknesses in different portions.
Public/Granted literature
- US20170294356A1 FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-10-12
Information query
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