Invention Grant
- Patent Title: Magnetoresistive effect element with magnetic layers and magnetic memory
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Application No.: US15696751Application Date: 2017-09-06
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Publication No.: US10340311B2Publication Date: 2019-07-02
- Inventor: Megumi Yakabe , Satoshi Seto , Chikayoshi Kamata , Saori Kashiwada , Junichi Ito
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-220922 20161111
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/08 ; H01L43/10

Abstract:
According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.
Public/Granted literature
- US20180138237A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2018-05-17
Information query
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