Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16128479Application Date: 2018-09-11
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Publication No.: US10340367B2Publication Date: 2019-07-02
- Inventor: Yu-Ming Lin , Ken-Ichi Goto
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L21/02 ; H01L21/768 ; H01L23/535 ; H01L29/10 ; H01L29/16 ; H01L29/24 ; H01L29/78
Abstract:
A semiconductor device including a Fin FET device includes a fin structure protruding from a substrate layer and having a length extending in a first direction. A channel layer is formed on the fin structure. A gate stack including a gate electrode layer and a gate dielectric layer extending in a second direction perpendicular to the first direction is formed over the channel layer covering a portion of the length of the fin structure. The source and drain contacts are formed over trenches that extend into a portion of a height of the fin structure.
Public/Granted literature
- US20190019882A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-01-17
Information query
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