Invention Grant
- Patent Title: Method of manufacturing fin field-effect transistor device
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Application No.: US15967295Application Date: 2018-04-30
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Publication No.: US10340384B2Publication Date: 2019-07-02
- Inventor: Wei-Ken Lin , Chun Te Li , Chih-Peng Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/321 ; H01L21/8234
Abstract:
A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.
Public/Granted literature
- US20190165156A1 Fin Field-Effect Transistor Device and Method Public/Granted day:2019-05-30
Information query
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