Invention Grant
- Patent Title: Intermediate semiconductor device having an aliphatic polycarbonate layer
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Application No.: US15962375Application Date: 2018-04-25
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Publication No.: US10340388B2Publication Date: 2019-07-02
- Inventor: Satoshi Inoue , Tatsuya Shimoda , Nobutaka Fujimoto , Kiyoshi Nishioka , Shuichi Karashima
- Applicant: Japan Advanced Institute of Science and Technology , Sumitomo Seika Chemicals Co., Ltd.
- Applicant Address: JP Ishikawa JP Hyogo
- Assignee: Japan Advanced Institute of Science and Technology,Sumitomo Seika Chemicals Co., Ltd.
- Current Assignee: Japan Advanced Institute of Science and Technology,Sumitomo Seika Chemicals Co., Ltd.
- Current Assignee Address: JP Ishikawa JP Hyogo
- Agency: Buckley, Maschoff & Talwalkar LLC
- Priority: JP2013-259031 20131216
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/24 ; H01L29/66 ; C09D7/61 ; C09D5/00 ; C09D169/00 ; C08G64/02 ; H01L29/786 ; H01L21/385 ; H01L21/477
Abstract:
It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a source/drain region without through processes under a vacuum or a low pressure or with no use of expensive equipment.
Public/Granted literature
- US20180315861A1 SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE Public/Granted day:2018-11-01
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