A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.