Invention Grant
- Patent Title: Semiconductor light emitting element
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Application No.: US15409546Application Date: 2017-01-19
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Publication No.: US10340413B2Publication Date: 2019-07-02
- Inventor: Hitoshi Minakuchi , Kenichi Matsui
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Mori & Ward, LLP
- Priority: JP2014-125673 20140618
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/00

Abstract:
A semiconductor light emitting element includes a substrate and a semiconductor structure. The substrate has a first main surface, a second main surface and side surfaces. The side surfaces form a first altered area in which voids are positioned in a first imaginary line and a second imaginary line different from the first imaginary line in the thickness direction of the substrate. The semiconductor structure is provided on or above the first main surface of the substrate.
Public/Granted literature
- US20170133551A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2017-05-11
Information query
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