Invention Grant
- Patent Title: Resistive memory device containing carbon barrier and method of making thereof
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Application No.: US15611029Application Date: 2017-06-01
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Publication No.: US10340449B2Publication Date: 2019-07-02
- Inventor: Ming-Che Wu , Alvaro Padilla , Tanmay Kumar
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C13/00
Abstract:
A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.
Public/Granted literature
- US20180351093A1 RESISTIVE MEMORY DEVICE CONTAINING CARBON BARRIER AND METHOD OF MAKING THEREOF Public/Granted day:2018-12-06
Information query
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