Invention Grant
- Patent Title: Semiconductor device and multiphase semiconductor device
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Application No.: US15324031Application Date: 2014-08-29
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Publication No.: US10340816B2Publication Date: 2019-07-02
- Inventor: Koichi Ushijima
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2014/072748 WO 20140829
- International Announcement: WO2016/031052 WO 20160303
- Main IPC: H02M1/00
- IPC: H02M1/00 ; H02M1/32 ; H02M7/00 ; H01L23/34 ; H01L25/07 ; H01L25/18 ; H02M1/084 ; H02M7/537 ; H01L29/739

Abstract:
In the present invention, a lower arm control substrate, an insulation material and an upper arm control substrate are layered to be arranged in this order on a top surface of a small-sized power module. An upper arm main region and a lower arm main region are arranged to overlap the insulation material in plan view, and large parts of the upper arm main region and the lower arm main region overlap each other in plan view. The upper arm control substrate and the upper arm control substrate are configured with substrates of the same structure and the lower arm control substrate has a positional relation with the upper arm control substrate so as to be rotated by 180° from the upper arm control substrate in a horizontal direction.
Public/Granted literature
- US20170201188A1 SEMICONDUCTOR DEVICE AND MULTIPHASE SEMICONDUCTOR DEVICE Public/Granted day:2017-07-13
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