Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15663728Application Date: 2017-07-29
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Publication No.: US10340905B2Publication Date: 2019-07-02
- Inventor: Akira Tanabe
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-191234 20160929
- Main IPC: H03K17/04
- IPC: H03K17/04 ; H03K17/041 ; H03K17/10 ; H03K17/0412

Abstract:
Related-art back bias generation circuits cause a problem where a long time is required for transition between an operating state and a standby state because driving power is lowered to reduce the power consumption in the standby state. A back bias generation circuit outputs a predetermined voltage. The predetermined voltage is the back bias voltage of a substrate in a standby mode. A bias control circuit stores an electrical charge while a circuit block is in an operating mode, supplies the stored electrical charge to the substrate of a MOSFET included in the circuit block when the circuit block transitions from the operating mode to the standby mode, and subsequently supplies the output of the back bias generation circuit to the substrate of the MOSFET.
Public/Granted literature
- US20180091130A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-03-29
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