Invention Grant
- Patent Title: Micro-electro-mechanical system (MEMS) structure including isolation ring at sidewalls of semiconductor via and method for forming the same
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Application No.: US15896405Application Date: 2018-02-14
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Publication No.: US10343895B2Publication Date: 2019-07-09
- Inventor: Kai-Fung Chang , Lien-Yao Tsai , Len-Yi Leu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The MEMS device structure includes a micro-electro-mechanical system (MEMS) substrate, and a substrate formed over the MEMS substrate. The substrate includes a semiconductor via through the substrate. The MEMS device structure includes a dielectric layer formed over the substrate and a polymer layer formed on the dielectric layer. The MEMS device structure also includes a conductive layer formed in the dielectric layer and the polymer layer. The conductive layer is electrically connected to the semiconductor via, and the polymer layer is between the conductive layer and the dielectric layer.
Public/Granted literature
- US20190002275A1 MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-01-03
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