- Patent Title: Dark field wafer nano-defect inspection system with a singular beam
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Application No.: US15611290Application Date: 2017-06-01
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Publication No.: US10345246B2Publication Date: 2019-07-09
- Inventor: Xinkang Tian , Ching-Ling Meng , Yan Sun
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G01N21/88
- IPC: G01N21/88 ; G01N21/49 ; G01N21/95 ; G01N21/47
Abstract:
Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.
Public/Granted literature
- US20170350826A1 DARK FIELD WAFER NANO-DEFECT INSPECTION SYSTEM WITH A SINGULAR BEAM Public/Granted day:2017-12-07
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