Invention Grant
- Patent Title: Highly sensitive, low power fluxgate magnetic sensor integrated onto semiconductor process technologies
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Application No.: US15169639Application Date: 2016-05-31
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Publication No.: US10345397B2Publication Date: 2019-07-09
- Inventor: Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: G01R33/04
- IPC: G01R33/04 ; G01R33/00

Abstract:
An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
Public/Granted literature
- US20170343622A1 HIGHLY SENSITIVE, LOW POWER FLUXGATE MAGNETIC SENSOR INTEGRATED ONTO SEMICONDUCTOR PROCESS TECHNOLOGIES Public/Granted day:2017-11-30
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