Invention Grant
- Patent Title: Photomask and a fabrication method therefor
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Application No.: US15399205Application Date: 2017-01-05
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Publication No.: US10345692B2Publication Date: 2019-07-09
- Inventor: Chun-Lang Chen , Chih-Chiang Tu , Shih-Hao Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G03F1/26
- IPC: G03F1/26 ; G03F1/28 ; H01L21/033

Abstract:
A method of fabricating a photomask includes depositing a phase shifter over a light transmitting substrate, depositing a shading layer over the light transmitting substrate, and removing a portion of the shading layer and a portion of the phase shifter to expose a portion of the light transmitting substrate. The phase shifter having at least two semiconductor layers and at least two dielectric layers.
Public/Granted literature
- US20180149960A1 PHOTOMASK AND A FABRICATION METHOD THEREFOR Public/Granted day:2018-05-31
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