Systems and methods are provided for flash memory devices to improve the write performance in case of write path errors and to hide the write path error correction latency. Some embodiments can provide instant parity correction to allow user data sharing the same strip with the data block having an error to be programmed into the flash memory before the failed data is corrected. Additionally, selected stalling can allow some independent data in different flash memory dies or planes to be programmed during the time of write path error correction.