A semiconductor memory device includes a memory cell array and a row decoder disposed in a first direction over a substrate and a plurality of coupling lines for electrically coupling the memory cell array and the row decoder. Each of the coupling lines includes a first conductive line disposed in the first direction; a second conductive line disposed parallel to the first conductive line; and a pad coupling the first conductive line and the second conductive line, and coupled to the memory cell array or the row decoder through a contact plug. The coupling lines are routed from both sides of the pad in the first direction.