Methods of operating a memory include concurrently discharging a voltage level of a data line and source of the memory, monitoring a representation of a voltage difference between a voltage level of a control gate of a transistor connected between the data line and the source and a voltage level of the data line, activating a current path between the control gate of the transistor and the source if the voltage difference is deemed to be greater than a first value, and deactivating the current path if the voltage difference is deemed to be less than a second value. Memory configured to perform such methods include comparators configured to monitor voltage nodes capacitively coupled to the data line and to the control gate of the transistor connected between the data line and the source, and a current path selectively connecting the control gate of the transistor to the source.