Methods, systems, and apparatus that support efficient utilization of die area for cross-point memory architecture are described. A memory array may include active memory cells overlying each portion of the substrate that includes certain types of support circuitry, such as decoders and sense amplifiers. Boundary tiles, which may be portions of an array having a different configuration from other portions of the array, may be positioned on one side of an array of memory tiles. The boundary tiles may include support components to access both memory cells of neighboring memory tiles and memory cells overlying the boundary tiles. Column lines and column line decoders may be integrated as part of a boundary tile. Access lines, such as row lines may be truncated or omitted at or near borders of the memory portion of the memory device.