Invention Grant
- Patent Title: Memory system having impedance calibration circuit
-
Application No.: US15968065Application Date: 2018-05-01
-
Publication No.: US10347358B2Publication Date: 2019-07-09
- Inventor: Hee Jun Kim , Minsoon Hwang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0116030 20170911
- Main IPC: G11C11/4099
- IPC: G11C11/4099 ; G11C29/50 ; G11C11/4093 ; H03H11/28 ; G11C11/4076

Abstract:
A memory system includes: a buffer memory device; and a memory controller configured to communicate data with the buffer memory device, wherein the memory controller includes: an input/output power voltage sensor configured to generate a first signal by sensing a change in input/output power voltage; and an impedance calibration circuit configured to perform an impedance calibration operation in response to the first signal.
Public/Granted literature
- US20190080783A1 MEMORY SYSTEM HAVING IMPEDANCE CALIBRATION CIRCUIT Public/Granted day:2019-03-14
Information query
IPC分类: