Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US15173241Application Date: 2016-06-03
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Publication No.: US10347466B2Publication Date: 2019-07-09
- Inventor: Takahiro Hirano , Toshihiko Iwao
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2015-115434 20150608
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/16

Abstract:
Disclosed is a plasma processing apparatus that includes a processing container configured to accommodate a wafer, and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container. The dielectric window has a thickness of 3λ/8 or less (here, λ is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface.
Public/Granted literature
- US20160358758A1 PLASMA PROCESSING APPARATUS Public/Granted day:2016-12-08
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