A method for producing a silicon carbide wafer includes: providing a silicon carbide wafer having an unpolished surface; in which the unpolished surface has a first crystal face and a second crystal face; polishing one face of the first crystal face and the second crystal face of the unpolished surface in a first polishing solution by using a polisher; in which the polisher includes a polishing pad and a plurality of abrasive particles fixed on the polishing pad; and polishing the other face of the first crystal face and the second crystal face of the unpolished surface in a second polishing solution by using the polisher; in which a pH value of the first polishing solution is less than or equal to 7, and a pH value of the second polishing solution is greater than or equal to 7. The present disclosure also provides a silicon carbide wafer.