Invention Grant
- Patent Title: Production of an integrated circuit including electrical contact on SiC
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Application No.: US15443603Application Date: 2017-02-27
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Publication No.: US10347490B2Publication Date: 2019-07-09
- Inventor: Roland Rupp , Thomas Gutt , Michael Treu
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102006050360 20061025
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/04 ; H01L21/268 ; H01L29/16 ; H01L29/47 ; H01L29/66 ; H01L29/872 ; H01L29/417 ; H01L29/45 ; H01L21/02
Abstract:
Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.
Public/Granted literature
- US20170200610A1 PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC Public/Granted day:2017-07-13
Information query
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