Invention Grant
- Patent Title: Forming recombination centers in a semiconductor device
-
Application No.: US15850041Application Date: 2017-12-21
-
Publication No.: US10347491B2Publication Date: 2019-07-09
- Inventor: Wolfgang Jantscher , Alexander Binter , Oliver Blank , Petra Fischer , Ravi Keshav Joshi , Kurt Pekoll , Manfred Pippan , Andreas Riegler , Werner Schustereder , Juergen Steinbrenner , Waqas Mumtaz Syed
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016125316 20161222
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L21/324 ; H01L29/66 ; H01L21/308 ; H01L21/768 ; H01L29/40 ; H01L29/739 ; H01L29/06
Abstract:
Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. Forming the contact electrode includes forming a barrier layer on sections of the semiconductor body uncovered in the at least one contact hole, wherein the barrier layer is configured to inhibit the recombination center particles from diffusing out of the semiconductor body.
Public/Granted literature
- US20180182629A1 Forming Recombination Centers in a Semiconductor Device Public/Granted day:2018-06-28
Information query
IPC分类:
