Invention Grant
- Patent Title: Methods of minimizing plasma-induced sidewall damage during low K etch processes
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Application No.: US15923722Application Date: 2018-03-16
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Publication No.: US10347498B2Publication Date: 2019-07-09
- Inventor: Chih-yu Hsu , Peng Shen , Nathan Stafford
- Applicant: L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Agent Yan Jiang
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/3065 ; H01L21/311 ; H01L21/033 ; H01L21/027 ; H01L21/308 ; H01L21/768 ; H01L21/28 ; H01L21/02 ; H01L21/67 ; H01L21/683
Abstract:
Methods for minimizing plasma-induced sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); Rx[—C═N(Rz)]y; and R(3-a)—N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.
Public/Granted literature
- US20180211845A1 METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES Public/Granted day:2018-07-26
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