Methods for manufacturing semiconductor devices may include forming a stack structure including layers stacked on a substrate, forming a mask pattern on the stack structure, and patterning the stack structure using the mask pattern such that the stack structure has an end portion with a stepped profile. The patterning of the stack structure may include performing a pad etching process of etching the stack structure using the mask pattern as an etch mask, and performing a mask etching process of etching a sidewall of the mask pattern. The performing of the mask etching process may include irradiating an ion beam onto the mask pattern, which may be irradiated at a first tilt angle with respect to the sidewall of the mask pattern and at a second tilt angle with respect to a top surface of the mask pattern. The first tilt angle may be different from the second tilt angle.