Invention Grant
- Patent Title: Curing photo resist for improving etching selectivity
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Application No.: US15089904Application Date: 2016-04-04
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Publication No.: US10347505B2Publication Date: 2019-07-09
- Inventor: Wen-Kuo Hsieh , Tsung-Hung Chu , Ming-Chung Liang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/311 ; H01L21/768 ; G03F7/40
Abstract:
A method includes exposing and developing a negative photo resist, and performing a treatment on the negative photo resist using an electron beam. After the treatment, a layer underlying the photo resist is etched using the negative photo resist as an etching mask.
Public/Granted literature
- US20160218016A1 Curing Photo Resist for Improving Etching Selectivity Public/Granted day:2016-07-28
Information query
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