Invention Grant
- Patent Title: Trench isolation structures and methods for forming the same
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Application No.: US15262694Application Date: 2016-09-12
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Publication No.: US10347524B2Publication Date: 2019-07-09
- Inventor: Hsiung-Shih Chang , Jui-Chun Chang , Li-Che Chen
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/74
- IPC: H01L21/74 ; H01L21/762
Abstract:
A trench isolation structure is provided. The trench isolation structure includes a substrate. A polygonal trench is disposed in the substrate. An insulating material is disposed in the polygonal trench, and a polygon top-side contact structure is disposed in the polygonal trench and surrounded by the insulating material. The polygon top-side contact structure has the same shape as the polygonal trench from a top view. A method for forming the trench isolation structure is also provided.
Public/Granted literature
- US20180076288A1 TRENCH ISOLATION STRUCTURES AND METHODS FOR FORMING THE SAME Public/Granted day:2018-03-15
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